cha 2069 - faa ref. : dscha2069 - faa2356 - 21 dec 12 1 / 10 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 16 - 32ghz low noise amplifier gaas monolithic microwave ic in smd package description the cha2069 - faa is a three - stage self - biased wide band monolithic low noise amplifier. the circuit is manufactured with a standard phemt process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is proposed in leadless surface mount hermetic met al ceramic 6x6mm2 package. the overall power supply is of 4.5v/55ma. the circuit is dedicated to space applications and also well suited for a wide range of microwave and millimetre wave applications and systems. main features rd order intercept point main electrical characteristics tamb.= +25c symbol parameter min typ max unit fop operating frequency range 16 32 ghz nf noise figure 2.5 db g small signal gain 22 db esd protections: electrostatic discharge sensitive device observe handling precautions! ums a2069 yyww ?? ? 0 5 10 15 20 25 30 10 15 20 25 30 35 40 linear gain frequency (ghz) +25 c - 40 c +85 c
cha2069 - faa 16 - 32ghz low noise amplifier ref. : dscha2069 - faa2356 - 21 dec 12 2 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 ville bon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics tamb.= +25c, vd = +4.5v, pads b=d=e=gnd , c=f=nc. symbol parameter min typ max unit fop operating frequency range 16 32 ghz g gain (1) 22 db ? (1) ? (1) 2.5 db is11i input return loss (1) 10 db is22i output return loss (1) 10 db ip3 3rd order intercept point 20 dbm p1db output power at 1db gain compression 10 dbm id drain bias current 55 75 ma (1) these values are representative of on board measurements as defined on the drawing 99622 (see below). absolute maximum ratings (1) tamb.= +25c symbol parameter values unit vd drain bias voltage (3) 5 v id drain bias current 120 ma pin maximum peak input power overdrive (2) +15 dbm tj junction temperature 175 c ta operating temperature range - 40 to +8 5 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. (3) see chip biasing options
16 - 32ghz low noise amplifier cha2069 - faa ref. : dscha2069 - faa2356 - 21 dec 12 3 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical package sij parameters for low current configuration in 99622 board - in connector plane temp = +25c, vd= +4.5v, b, d, e grounded , c=f=nc. freq (ghz) dbs11 phs11 () dbs12 phs12 () dbs21 phs21 () dbs22 phs22 () 10.00 - 5.26 - 139.50 - 52.14 19.61 14.17 47.38 - 4.80 125.30 11.00 - 5.98 86.98 - 51.10 - 106.90 17.82 - 106.00 - 6.29 3.35 12.00 - 6.67 - 32.51 - 51.48 112.80 20.05 103.30 - 9.90 - 94.31 13.00 - 7.74 - 149.00 - 50.15 - 20.08 21.21 - 42.75 - 16.62 179.50 14.00 - 9.37 94.70 - 48.25 - 153.70 21.90 175.30 - 23.95 87.51 15.00 - 13.54 - 39.12 - 46.94 78.00 22.14 35.08 - 21.77 65.93 16.00 - 13.99 - 176.10 - 47.79 - 43.35 21.92 - 100.80 - 18.77 - 48.01 17.00 - 17.92 76.36 - 48.41 - 154.50 21.38 127.20 - 11.87 - 167.20 18.00 - 21.77 - 111.30 - 49.72 98.54 21.14 - 0.31 - 9.37 112.50 19.00 - 14.36 130.00 - 50.28 - 8.54 21.29 - 128.20 - 11.17 28.74 20.00 - 14.24 29.75 - 54.55 - 126.00 21.01 104.00 - 16.54 - 87.36 21.00 - 16.32 - 77.70 - 55.85 144.70 20.99 - 21.16 - 16.86 122.30 22.00 - 17.07 177.50 - 59.32 46.11 21.21 - 147.50 - 15.65 24.26 23.00 - 15.81 68.76 - 58.70 - 88.09 21.43 84.81 - 22.00 - 3.87 24.00 - 12.47 - 20.93 - 60.84 132.70 21.20 - 44.78 - 14.18 - 13.27 25.00 - 13.44 - 99.95 - 58.67 - 23.64 20.89 - 171.90 - 11.43 - 113.10 26.00 - 18.05 152.50 - 54.54 - 175.20 20.47 61.54 - 10.51 143.30 27.00 - 16.22 36.49 - 52.21 45.44 20.14 - 64.19 - 12.44 33.96 28.00 - 12.46 - 34.87 - 54.01 - 78.85 19.80 169.80 - 9.41 - 77.53 29.00 - 13.11 - 108.80 - 55.02 163.10 19.84 45.70 - 9.90 - 164.20 30.00 - 16.84 129.50 - 55.63 28.57 20.13 - 84.86 - 11.08 72.67 31.00 - 14.87 9.06 - 54.07 - 131.40 19.84 145.00 - 9.06 - 23.83 32.00 - 23.40 - 94.34 - 49.78 56.26 20.25 9.39 - 12.28 - 92.82 33.00 - 24.20 48.25 - 54.43 142.00 19.50 - 126.30 - 13.52 151.00 34.00 - 10.19 - 153.90 - 46.78 - 61.91 17.52 89.64 - 11.71 96.35 35.00 - 5.80 121.30 - 48.48 167.80 14.98 - 42.68 - 26.11 - 42.73 36.00 - 5.95 12.35 - 52.86 84.83 12.65 179.90 - 8.62 - 178.20 37.00 - 4.83 - 135.40 - 47.47 27.68 8.27 47.13 - 6.31 137.90 38.00 - 3.14 132.90 - 48.04 - 60.40 4.76 - 73.37 - 14.00 68.03 39.00 - 4.01 42.61 - 41.73 - 159.90 2.29 165.10 - 11.17 - 118.80 40.00 - 4.42 - 78.52 - 42.89 103.70 - 0.19 37.92 - 10.92 137.40
cha2069 - faa 16 - 32ghz low noise amplifier ref. : dscha2069 - faa2356 - 21 dec 12 4 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 ville bon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical boards measurements temp = +25c, vd=4.5v pads b, d, e grounded , c=f=nc. measurements in the connector planes, using the proposed land pattern & board 99622. linear gain versus frequency and temperature input & output matching 0 5 10 15 20 25 30 10 15 20 25 30 35 40 linear gain frequency (ghz) +25 - 20 - 18 - 16 - 14 - 12 - 10 - 8 - 6 - 4 - 2 0 10 15 20 25 30 35 40 s11 & s22 (db) frequency (ghz) dbs11 dbs22
16 - 32ghz low noise amplifier cha2069 - faa ref. : dscha2069 - faa2356 - 21 dec 12 5 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical boards measurements temp = +25c, vd=4.5v pads b, d, e grounded , c=f=nc. measurements in the connector planes, using the proposed land pattern & board 99622. noise figure versus frequency and temperature output power at 1db compression versus frequency 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 14 16 18 20 22 24 26 28 30 32 34 noise figure (db) frequency (ghz) +25 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 ouput p1db (dbm) frequency (ghz)
cha2069 - faa 16 - 32ghz low noise amplifier ref. : dscha2069 - faa2356 - 21 dec 12 6 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 ville bon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 package outline (1) all dimensions are in mm (1) it is strongly recommended to ground all pins marked gnd through the pcb
16 - 32ghz low noise amplifier cha2069 - faa ref. : dscha2069 - faa2356 - 21 dec 12 7 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
cha2069 - faa 16 - 32ghz low noise amplifier ref. : dscha2069 - faa2356 - 21 dec 12 8 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 ville bon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 biasing options this chip is self - biased, and flexibility is provided by the access to number of pads. the internal dc electrical schematic is given in order to use these pads in a safe way. the two requirements are : n 1: not exceed vds = 3.5volt (internal drain to source voltage ). n 2: not biased in such a way that vgs becomes positive. (internal gate to source voltage ) we propose two standard biasing : low noise and low consumption: vd = 4.5v and b, d, e grounded. all th e other pads non conn ected (nc ). idd = 55ma & pout - 1db = 10dbm typical. low noise and higher output power vd = 4.5v and b, c, f grounded. all the other pads non connected (nc ). idd = 75ma & pout - 1db = 12dbm typical. vd
16 - 32ghz low noise amplifier cha2069 - faa ref. : dscha2069 - faa2356 - 21 dec 12 9 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 note
cha2069 - faa 16 - 32ghz low noise amplifier ref. : dscha2069 - faa2356 - 21 dec 12 10 / 10 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 ville bon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 smd mounting procedure for the mounting process standard techniques involving solder paste and a suitable reflow process can be used. for further details, see application note an0017 available at http://www.ums - gaas.com . recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.ums - gaas.com . recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums package products. faa type surface mount hermetic package refer to the application note an002 4 available at http://www.ums - gaas.com for assembly recommendations for the ums faa package products. ordering information leadless hermetic package: cha2069 - faa information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent righ ts of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.
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